डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPD60R520CP | Power Transistor 9?5-'@,)'4?
4VVS=>AB= # : A 0<& < ,9 = 4 = > :<
7LHZ[XLY U )DK: G H ; > |
Infineon Technologies |
|
IPD60R520CP | N-Channel MOSFET isc N-Channel MOSFET Transistor IPD60R520CP,IIPD60R520CP
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.52Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |