डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPD60R3K3C6 | MOSFET MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™C6600V
600VCoolMOS™C6PowerTransistor IPD60R3K3C6
DataSheet
Rev.2.3 Final
Industrial&Multimarket
+<<9#%(F& |
Infineon Technologies |
|
IPD60R3K3C6 | N-Channel MOSFET isc N-Channel MOSFET Transistor IPD60R3K3C6,IIPD60R3K3C6
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤3.3Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |