IPD600N25N3 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| IPD600N25N3 | N-Channel MOSFET isc N-Channel MOSFET Transistor IPD600N25N3,IIPD600N25N3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤60mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
 INCHANGE |
|
| IPD600N25N3 | Power-Transistor IPD600N25N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
• 17 |
 Infineon |
|
| IPD600N25N3G | Power Transistor IPD600N25N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
• 17 |
 Infineon Technologies |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |