डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPD530N15N3 | Power Transistor IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
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Infineon |
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IPD530N15N3 | N-Channel MOSFET isc N-Channel MOSFET Transistor IPD530N15N3,IIPD530N15N3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤53mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
INCHANGE |
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IPD530N15N3G | Power Transistor IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
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Infineon |
www.DataSheet.in | 2017 | संपर्क |