डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPD400N06N | N-Channel MOSFET isc N-Channel MOSFET Transistor IPD400N06N,IIPD400N06N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤40mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust de |
INCHANGE |
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IPD400N06N | Power-Transistor "%&$!"#b $ ;B 1 ='=-: >5>?;=
7MI[YMZ O >@50ABAE8B2 78=6 2 >=D4@B4@A 0=3 AG=2
@42 B8582 0B8>= O' 2 70==4;4=70=2 4< 4=B =>@< 0;;4D4; O
R >? 4@0B8=6 B4< ? 4@0BC@4 O D0;0=2 74 @0B43 O) 1 5@44 ;403 ? ;0B8= |
Infineon |
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IPD400N06NG | Power-Transistor "%&$!"#b $ ;B 1 ='=-: >5>?;=
7MI[YMZ O >@50ABAE8B2 78=6 2 >=D4@B4@A 0=3 AG=2
@42 B8582 0B8>= O' 2 70==4;4=70=2 4< 4=B =>@< 0;;4D4; O
R >? 4@0B8=6 B4< ? 4@0BC@4 O D0;0=2 74 @0B43 O) 1 5@44 ;403 ? ;0B |
Infineon Technologies |
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