IPD350N06L डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IPD350N06L,IIPD350N06L ·FEATURES ·Static drain-source on-resistance: RDS(on)≤35mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust de

"%&$!"#c % (>.;?6?@<> 7NJ]ZN[ P ? A61BCBF9C3 89>7 3 ? >E5AC5AB 1>4 BH>3 A53 C9693 1C9? > P( 3 81>>5<5>81>3 5=5>C 7 C5=@5A1CDA5 P E1<1>3 85 A1C54 P* 2 6A55 <514 @<1C9>7

IPD350N06L G OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - logicl level • 175 °C operating temperature • Avalanche rated • Pb-