IPD33CN10N डाटा शीट PDF( Datasheet )

IPB35CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G IPU33CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R

isc N-Channel MOSFET Transistor IPD33CN10N,IIPD33CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤34mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d

IPB35CN10N G IPI35CN10N G IPP35CN10N G IPD33CN10N G IPU33CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance