डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPD25CNE8NG | Power-Transistor IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G
OptiMOS®2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R |
Infineon Technologies |
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IPD25CNE8NG | Power-Transistor | Infineon Technologies |
www.DataSheet.in | 2017 | संपर्क |