डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPD220N06L3 | N-Channel MOSFET isc N-Channel MOSFET Transistor IPD220N06L3,IIPD220N06L3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤22mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
INCHANGE |
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IPD220N06L3 | Power-Transistor Type
OptiMOS(TM)3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, |
Infineon |
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IPD220N06L3G | Power-Transistor Type
OptiMOS(TM)3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, |
Infineon Technologies |
www.DataSheet.in | 2017 | संपर्क |