डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPD200N15N3 | Power-Transistor IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
|
Infineon |
|
IPD200N15N3 | N-Channel MOSFET isc N-Channel MOSFET Transistor IPD200N15N3,IIPD200N15N3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤20mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
INCHANGE |
|
IPD200N15N3G | Power-Transistor IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
|
Infineon Technologies |
www.DataSheet.in | 2017 | संपर्क |