IPD122N10N3 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| IPD122N10N3 | N-Channel MOSFET isc N-Channel MOSFET Transistor IPD122N10N3,IIPD122N10N3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤12.2mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus |
 INCHANGE |
|
| IPD122N10N3 | Power-Transistor IPD122N10N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
• 17 |
 Infineon |
|
| IPD122N10N3G | Power-Transistor IPD122N10N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
• 17 |
Infineon |
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