डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPD110N12N3 | MOSFET MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOS™Power-Transistor,120V
OptiMOS™3Power-Transistor IPD_S110N12N3G
DataSheet
Rev.2.4 Final
Industrial&Multimarket
OptiMOSTM3Power-Trans |
Infineon |
|
IPD110N12N3 | N-Channel MOSFET isc N-Channel MOSFET Transistor IPD110N12N3,IIPD110N12N3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤11mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
INCHANGE |
|
IPD110N12N3G | MOSFET MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOS™Power-Transistor,120V
OptiMOS™3Power-Transistor IPD_S110N12N3G
DataSheet
Rev.2.4 Final
Industrial&Multimarket
OptiMOSTM3Power-Trans |
Infineon |
www.DataSheet.in | 2017 | संपर्क |