डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPD088N06N3 | N-Channel MOSFET isc N-Channel MOSFET Transistor IPD088N06N3,IIPD088N06N3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤8.8mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
INCHANGE |
|
IPD088N06N3 | Power-Transistor IeQ
# ! !
"%&$!"#!B<" # : A 0<& <,9=4=>: <
6LHZ[XLY Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3
B53
Q( @D9=9J54 D53 8>? 7I 6? B 3 ? >F5BD5BC Q H3 5<<5>D71D5 3 81B75 H' 9H" |
Infineon |
|
IPD088N06N3G | Power-Transistor IeQ
# ! !
"%&$!"#!B<" # : A 0<& <,9=4=>: <
6LHZ[XLY Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3
B53
Q( @D9=9J54 D53 8>? 7I 6? B 3 ? >F5BD5BC Q H3 5<<5>D71D5 3 81B75 H' 9H" |
Infineon Technologies |
|
IPD088N06N3G | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPD088N06N3G
·FEATURES ·With TO-252(DPAK) packaging ·With low gate drive requirements ·Very high commutation ruggedness ·100% avalanche tested ·Min |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |