डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPD068P03L3 | N-Channel MOSFET isc P-Channel MOSFET Transistor IPD068P03L3,IIPD068P03L3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤6.8mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
INCHANGE |
|
IPD068P03L3 | Power-Transistor OptiMOSTM P3 Power-Transistor
Features • single P-Channel in DPAK • Qualified according JEDEC1) for target applications
• 175 °C operating temperature • 100% Avalanche tested • Pb-free; RoHS complian |
Infineon |
|
IPD068P03L3G | Power-Transistor OptiMOSTM P3 Power-Transistor
Features • single P-Channel in DPAK • Qualified according JEDEC1) for target applications
• 175 °C operating temperature • 100% Avalanche tested • Pb-free; RoHS complian |
Infineon Technologies |
www.DataSheet.in | 2017 | संपर्क |