IPB60R299CP डाटा शीट PDF( Datasheet )

IPB60R299CP CoolMOSTM Power Transistor Features • Lowest figure-of-merit R ONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for targ

Isc N-Channel MOSFET Transistor IPB60R299CP ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations

IPB60R299CPA CoolMOSTM Power Transistor Product Summary V DS R DS(on),max Q g,typ 600 V 0.299 Ω 22 nC Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated • High