IPB60R199CP डाटा शीट PDF( Datasheet )

CoolMOS® Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target application

Isc N-Channel MOSFET Transistor IPB60R199CP ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations

IPB60R199CPA CoolMOS® Power Transistor Product Summary V DS R DS(on),max Q g,typ 600 V 0.199 Ω 33 nC Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated • High