डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPB108N15N3G | Power Transistor IPB108N15N3 G
IPP111N15N3 G IPI111N15N3 G
OptiMOS 3 Power-Transistor
TM
Product Summary V DS R DS(on),max (TO263) ID 150 10.8 83 V mΩ A
Features • N-channel, normal level • Excellent gate charge x R DS |
Infineon Technologies |
|
IPB108N15N3G | N-Channel MOSFET Isc N-Channel MOSFET Transistor
IPB108N15N3G
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |