डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPB081N06L3 | Power-Transistor Type
OptiMOS™3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, l |
Infineon |
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IPB081N06L3 | N-Channel MOSFET Isc N-Channel MOSFET Transistor
IPB081N06L3
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations |
INCHANGE |
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IPB081N06L3G | Power-Transistor Type
OptiMOS™3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, l |
Infineon Technologies |
www.DataSheet.in | 2017 | संपर्क |