डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPB037N06N3 | N-Channel MOSFET Isc N-Channel MOSFET Transistor
IPB037N06N3
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations |
INCHANGE |
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IPB037N06N3 | Power Transistor Type
OptiMOS™3 Power-Transistor
Features
• for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
• N-channel, normal leve |
Infineon |
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IPB037N06N3G | Power-Transistor Type
IPB037N06N3 G
™
IPI040N06N3 G IPP040N06N3 G
OptiMOS 3 Power-Transistor
Features • for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x R DS(on) product (FOM) • Very low on-re |
Infineon Technologies AG |
www.DataSheet.in | 2017 | संपर्क |