IPA180N10N3 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IPA180N10N3,IIPA180N10N3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤18mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-

IPA180N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 17

IPA180N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 17