डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IMYH200R012M1H | MOSFET IMYH200R012M1H
CoolSiC™ 2000 V SiC Trench MOSFET
CoolSiC™ 2000 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology
Features
• VDSS = 2000 V at Tvj = 25°C • IDCC = 123 A |
Infineon |
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IMYH200R012M1H | MOSFET | Infineon |
www.DataSheet.in | 2017 | संपर्क |