डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IMW120R007M1H | MOSFET IMW120R007M1H
CoolSiC™ 1200 V SiC Trench MOSFET
CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET
Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 225 A at Tc = 25°C • RDS(on) = 7 mΩ at VGS |
Infineon |
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IMW120R007M1H | MOSFET | Infineon |
www.DataSheet.in | 2017 | संपर्क |