HZ18-3-N fiche technique

No.	Partie #	Fabricant	Description
1	HZ18-1	Renesas	Silicon Epitaxial Planar Zener Diode • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. Ordering Information Type No. HZ S
2	HZ18-2	Renesas	Silicon Epitaxial Planar Zener Diode • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. Ordering Information Type No. HZ S
3	HZ18-2	SEMTECH	SILICON EPITAXIAL PLANER ZENER DIODES • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application. Absolute Maximum Ratings (Ta=25 oC)
4	HZ18-3	SEMTECH	SILICON EPITAXIAL PLANER ZENER DIODES • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application. Absolute Maximum Ratings (Ta=25 oC)
5	HZ18	Hitachi Semiconductor	Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application. Ordering Information Type No. HZ Ser
6	HZ18-3	Renesas	Silicon Epitaxial Planar Zener Diode • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. Ordering Information Type No. HZ S
7	HZ18-1	SEMTECH	SILICON EPITAXIAL PLANER ZENER DIODES • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application. Absolute Maximum Ratings (Ta=25 oC)
8	HZ18-3	Diotec	Silicon Planar Zener Diodes to lead Wärmewiderstand Sperrschicht – Anschlussdraht RthL < 240 K/W Zener voltages see table on next page – Zener-Spannungen siehe Tabelle auf der nächsten Seite 2 1 Valid, if leads are kept at ambient temperatere at a distance of 10 mm from cas
9	HZ18-3-N	Renesas	Silicon Planar Zener Diode • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible application. Ordering Information Part No. HZ-N
10	HZ18	Renesas Technology	Silicon Planar Zener Diode • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. www.DataSheet4U.com Ordering Infor
11	HZ1806K102R-10	Laird	Ferrite EMI Chip Beads • Up to 10 Amps (I MAX) continuous operating capability • Low DCR • Vibration Resistant • Rugged monolithic construction • Small footprint • Excellent retention under bias • Superior impedance vs. frequency characteristics • Economical • Broad range
12	HZ18-1	Diotec	Silicon Planar Zener Diodes to lead Wärmewiderstand Sperrschicht – Anschlussdraht RthL < 240 K/W Zener voltages see table on next page – Zener-Spannungen siehe Tabelle auf der nächsten Seite 2 1 Valid, if leads are kept at ambient temperatere at a distance of 10 mm from cas
13	HZ18-2	Diotec	Silicon Planar Zener Diodes to lead Wärmewiderstand Sperrschicht – Anschlussdraht RthL < 240 K/W Zener voltages see table on next page – Zener-Spannungen siehe Tabelle auf der nächsten Seite 2 1 Valid, if leads are kept at ambient temperatere at a distance of 10 mm from cas
14	HZ18-1-N	Renesas	Silicon Planar Zener Diode • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible application. Ordering Information Part No. HZ-N
15	HZ18-2-N	Renesas	Silicon Planar Zener Diode • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible application. Ordering Information Part No. HZ-N
16	CHZ180A-SEB	United Monolithic Semiconductors	180W L-Band HPA ■ Wide band capability: 1.2 – 1.4GHz ■ Pulsed operating mode ■ High power: > 180W ■ High PAE: up to 53% ■ DC bias: VDS = 45V @ ID_Q = 1.3A ■ MTTF > 106 hours @ Tj = 200°C ■ RoHS Hermetic Flange Ceramic package Pout(dBm) & PAE(%) Power Gain (dB) VD
17	HZ18CP	Hitachi	Silicon Epitaxial Planar Zener Diodes • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • Glass package DO-41 structure ensures high reliability. Ordering Information Type No. HZ-P Series Mark Type No. Package Code DO-41 Outline 2.0 1 B2 Type No.
18	HZ18BP	Hitachi	Silicon Epitaxial Planar Zener Diodes • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • Glass package DO-41 structure ensures high reliability. Ordering Information Type No. HZ-P Series Mark Type No. Package Code DO-41 Outline 2.0 1 B2 Type No.
19	HZ18L	Renesas Technology	Silicon Epitaxial Planar Zener Diode for Low Noise Application • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 5.2V through 3