डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
HY3506W | N-Channel Enhancement Mode MOSFET HY3506P/W
N-Channel Enhancement Mode MOSFET
Features
• • • •
60V/190A RDS(ON) = 3.0 mΩ (typ.) @ VGS=10V
Pin Description
100% avalanche tested
Reliable and Rugged Lead Free and Green Devices Availab |
HOOYI |
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HY3506P | N-Channel Enhancement Mode MOSFET | HOOYI |
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HY3506P | N-Channel MOSFET | HUAYI |
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HY3506W | N-Channel Enhancement Mode MOSFET | HOOYI |
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HY3506B | N-Channel MOSFET | HUAYI |
www.DataSheet.in | 2017 | संपर्क |