डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
HY3506B | N-Channel MOSFET HY3506P/B
N-Channel Enhancement Mode MOSFET
Features
• 60V/190A
RDS(ON) = 3.5 m(typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available
(RoHS Compli |
HUAYI |
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HY3506P | N-Channel Enhancement Mode MOSFET | HOOYI |
|
HY3506P | N-Channel MOSFET | HUAYI |
|
HY3506W | N-Channel Enhancement Mode MOSFET | HOOYI |
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HY3506B | N-Channel MOSFET | HUAYI |
www.DataSheet.in | 2017 | संपर्क |