डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
HY1203S | N-Channel Enhancement Mode MOSFET HY1203S
Feature
30V/12A RDS(ON) = 7.5 mΩ(typ.)@VGS = 10V RDS(ON) = 9.0 mΩ(typ.)@VGS = 4.5V
Avalanche Rated Reliable and Rugged Lead Free Devices Available
N-Channel Enhancement Mode MOSFET Pi |
HOOYI |
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HY1203S | N-Channel Enhancement Mode MOSFET | HOOYI |
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