डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
HSU227 | Silicon Schottky Barrier Diode for High Speed Switching HSU227
Silicon Schottky Barrier Diode for High Speed Switching
ADE-208-779(Z) Rev 0 Mar. 1999 Features
• Low capacitance. (C=3.0pF max) • Ultra small Resin Package (URP) is suitablefor high density surface |
Hitachi Semiconductor |
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HSU227 | Silicon Schottky Barrier Diode for High Speed Switching | Hitachi Semiconductor |
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