HS50N06 डाटा शीट PDF( Datasheet )

HS50N06 N channel MOSFET 1.Description The HS50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60

N channel 60V MOSFET HS50N06DA 1. Description The HS50N06DA is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.This high densit

HS50N06PA HS50N06PA Pb Pb Free Plating Product 50A,60V Heatsink Planar N-Channel Power MOSFET Features • 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V • Low gate charge ( typical 31 nC) • Low Crss ( typic