HM4618 डाटा शीट PDF( Datasheet )

HM4618 N and P-Channel Enhancement Mode Power MOSFET Description The HM4618 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a le

HM4618A N and P-Channel Enhancement Mode Power MOSFET Description The HM4618A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a

HM4618B N and P-Channel Enhancement Mode Power MOSFET Description The HM4618B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a

HM4618SP Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Description The HM4618SP uses advanced trench technology to provide excellent RSS(ON), low gate charge and operation with gate vol