HM4410 डाटा शीट PDF( Datasheet )

30V N-Channel Enhancement-Mode MOSFET 30V N 沟道增强型 MOS 管 HM4410 VDS= 30V RDS(ON), Vgs@10V, Ids@12A = 9.0mΩ RDS(ON), [email protected], Ids@10A = 12mΩ Features 特性 Advanced trench process technology

HM4410A N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4410A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applica

HM4410B N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4410B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applica