HM3406 डाटा शीट PDF( Datasheet )

30V N-Channel Enhancement-Mode MOSFET 30V N 沟道增强型 MOS 管 VDS= 30V RDS(ON), Vgs@10V, Ids@A = 40mΩ RDS(ON), [email protected], [email protected] = 60mΩ Features 特性 Advanced trench process technology 高级�

HM3406B N-Channel Enhancement Mode Power MOSFET Description The HM3406 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM