डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
HM3401 | P-Channel Enhancement Mode Power MOSFET HM3401
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device |
H&M Semiconductor |
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HM3401B | P-Channel Enhancement Mode Power MOSFET HM3401B
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM3401B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This devic |
H&M Semiconductor |
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HM3401C | P-Channel Enhancement Mode Power MOSFET HM3401C
P-Channel Enhancement Mode Power MOSFET
Description
The HM3401C uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications.
Ge |
H&M Semiconductor |
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HM3401D | P-Channel Enhancement Mode Power MOSFET HM3401'
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM3401' uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This d |
H&M Semiconductor |
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HM3401PR | P-Channel Enhancement Mode Power MOSFET HM3401PR
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM3401PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This dev |
H&M Semiconductor |
www.DataSheet.in | 2017 | संपर्क |