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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
HGTG30N60 | 600V Planar IGBT Chip 600V Planar IGBT Chip
600V, 60A, VCE(sat) = 1.8V
HGTG30N60
Part HGTG30N60
VCES 600V
ICn 60A
VCE (sat) Typ 1.8
Die Size 6.6 x 6.6 mm2
See page 2 for ordering part numbers & supply formats
Applications
F |
Fairchild Semiconductor |
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HGTG30N60A4 | N-Channel IGBT HGTG30N60A4
Data Sheet August 2003 File Number 4829
600V, SMPS Series N-Channel IGBT
The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. |
Fairchild Semiconductor |
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HGTG30N60A4 | N-Channel IGBT HGTG30N60A4
Data Sheet January 2000 File Number 4829
600V, SMPS Series N-Channel IGBT
The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors |
Intersil Corporation |
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HGTG30N60A4 | SMPS IGBT IGBT - SMPS 600 V, 60 A
HGTG30N60A4
Description The HGTG30N60A4 combines the best features of high input
impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. This IGBT is ideal |
ON Semiconductor |
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HGTG30N60A4D | N-Channel IGBT HGTG30N60A4D
Data Sheet December 2001
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs a |
Fairchild Semiconductor |
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HGTG30N60A4D | N-Channel IGBT HGTG30N60A4D
Data Sheet January 2000 File Number 4830
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best featu |
Intersil Corporation |
|
HGTG30N60A4D | N-Channel IGBT SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600 V
HGTG30N60A4D
The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. Th |
ON Semiconductor |
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