डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
HG2N60 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES ·Drain Current –ID= 2A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 4.5Ω(Max) ·Aval |
Inchange Semiconductor |
|
HG2N60 | N-Channel Mosfet Transistor | Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |