HFS4N65 डाटा शीट PDF( Datasheet )

HFS4N65 April 2006 HFS4N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 2.3 Ω ID = 3.6* A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology

HFS4N65F July 2015 HFS4N65F 650V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Swi

HFS4N65FS July 2015 HFS4N65FS 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 4 A FEATURES TO-220F ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Tech