HFP4N65 डाटा शीट PDF( Datasheet )

Shantou Huashan Electronic Devices Co., Ltd. HFP4N65 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistor

HFP4N65 April 2006 HFP4N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 2.3 Ω ID = 3.6 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology