HFA2 डाटा शीट PDF( Datasheet )

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www.DataSheet.co.kr HFA200FA120P Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 200 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage dis

PD-2.450 rev. B 01/99 HEXFRED Features HFA200MD40C Ultrafast, Soft Recovery Diode VR = 400V VF (typ.)ƒ = 0.9V IF(AV) = 200A Qrr (typ.) = 330nC IRRM(typ.) = 8.1A trr(typ.) = 45ns di(rec)M/dt (typ.)ƒ = 270A/

HFA200MD40C Ultrafast, Soft Recovery Diode FEATURES ·Reduced RFI and EMI ·Reduced Snubbing ·Extensive Characterization of Recovery Parameters ·Minimum Lot-to-Lot variations for robust device performance an

PD-2.510 rev. A 02/99 HEXFRED Features HFA200MD40D TM Ultrafast, Soft Recovery Diode V R = 400V V F(typ.)ƒ = 0.9V IF(AV) = 200A Qrr (typ.) = 330nC IRRM(typ.) = 8.1A trr(typ.) = 45ns di(rec)M/dt (typ.)ƒ = 2

HFA20N50U HFA20N50U 500V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Ch

PD -2.453 rev. B 02/99 HFA240NJ40C HEXFRED Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters TM Ultrafast, Soft Recovery Diode LUG TERMINAL ANODE 1 LUG T