डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
HCTS20MS | Radiation Hardened Dual 4-Input NAND Gate TM HCTS20MS
September 1995
Radiation Hardened Dual 4-Input NAND Gate
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single |
Intersil |
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HCTS20MS | Radiation Hardened Dual 4-Input NAND Gate | Intersil |
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