डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
HBR10150 | SCHOTTKY BARRIER DIODE 肖特基势垒二极管 R SCHOTTKY BARRIER DIODE
HBR10150
主要参数 MAIN CHARACTERISTICS
封装 Package
IF(AV) VRRM Tj VF(max)
10(2×5)A
150 V 175 ℃ 0.72V (@Tj=125℃)
用途
z 高频开关� |
Jilin Sino |
|
HBR10150BF | SCHOTTKY BARRIER DIODE 肖特基势垒二极管 R SCHOTTKY BARRIER DIODE
HBR10150
主要参数 MAIN CHARACTERISTICS
封装 Package
IF(AV) VRRM Tj VF(max)
10(2×5)A
150 V 175 ℃ 0.72V (@Tj=125℃)
用途
z 高频开关� |
Jilin Sino |
|
HBR10150BFR | SCHOTTKY BARRIER DIODE 肖特基势垒二极管 R SCHOTTKY BARRIER DIODE
HBR10150
主要参数 MAIN CHARACTERISTICS
封装 Package
IF(AV) VRRM Tj VF(max)
10(2×5)A
150 V 175 ℃ 0.72V (@Tj=125℃)
用途
z 高频开关� |
Jilin Sino |
|
HBR10150CS | Schottky Barrier Rectifier Schottky Barrier Rectifier
FEATURES ·Common Cathode Structure ·Low Power Loss/High Efficiency ·High Operating Junction Temperature ·Guarding for Overvoltage protection,High reliability ·Minimum Lot-to-L |
INCHANGE |
|
HBR10150CT | Schottky Barrier Rectifier Schottky Barrier Rectifier
FEATURES ·Common Cathode Structure ·Low Power Loss/High Efficiency ·High Operating Junction Temperature ·Guarding for Overvoltage protection,High reliability ·100% avalanche te |
Inchange Semiconductor |
|
HBR10150F | SCHOTTKY BARRIER DIODE 肖特基势垒二极管 R SCHOTTKY BARRIER DIODE
HBR10150
主要参数 MAIN CHARACTERISTICS
封装 Package
IF(AV) VRRM Tj VF(max)
10(2×5)A
150 V 175 ℃ 0.72V (@Tj=125℃)
用途
z 高频开关� |
Jilin Sino |
|
HBR10150FR | SCHOTTKY BARRIER DIODE 肖特基势垒二极管 R SCHOTTKY BARRIER DIODE
HBR10150
主要参数 MAIN CHARACTERISTICS
封装 Package
IF(AV) VRRM Tj VF(max)
10(2×5)A
150 V 175 ℃ 0.72V (@Tj=125℃)
用途
z 高频开关� |
Jilin Sino |
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