डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
HAT2116H | Silicon N-Channel MOSFET HAT2116H
Silicon N Channel Power MOS FET Power Switching
Features
• Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance
RDS (on) = 6.3 mΩ typ. (at VGS = 10 V)
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Renesas Technology |
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HAT2116H | Silicon N-Channel MOSFET | Renesas Technology |
www.DataSheet.in | 2017 | संपर्क |