डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
H5N2509P | Silicon N-Channel MOSFET H5N2509P
Silicon N Channel MOSFET High Speed Power Switching
ADE-208-1378 (Z) Target Specification 1st. Edition
Mar. 2001
Features
• Low on-resistance : RDS(on) = 0.053 Ω typ.
• Low leakage current : |
Hitachi |
|
H5N2509P | Silicon N Channel MOS FET H5N2509P
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance: R DS (on) = 0.053 Ω typ. • Low leakage current: IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V) • High speed swi |
Renesas |
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