डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
GTVA123501FA | Thermally-Enhanced High Power RF GaN GTVA123501FA
Thermally-Enhanced High Power RF GaN on SiC HEMT 350 W, 50 V, 1200 – 1400 MHz
Description
The GTVA123501FA is a 350-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 1200 t |
Wolfspeed |
|
GTVA123501FA | Thermally-Enhanced High Power RF GaN | Wolfspeed |
www.DataSheet.in | 2017 | संपर्क |