GT80J101 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| GT80J101 | Silicon N-Channel MOSFET |
 Toshiba Semiconductor |
|
| GT80J101A | Silicon N-Channel IGBT GT80J101A
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT80J101A
High Power Switching Applications
Unit: mm Enhancement-Mode High Speed: tf = 0.40 µs (max) (IC = 80 A) Low Saturation Volta |
Toshiba Semiconductor |
|
| GT80J101B | Silicon N-Channel IGBT GT80J101B
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT80J101B
High Power Switching Applications
• • • Enhancement mode type High speed: tf = 0.40 µs (max) (I C = 80 A) Low saturat |
Toshiba Semiconductor |
शेयर लिंक :
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www.DataSheet.in | 2017 | संपर्क |