डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
GT60M323 | Silicon N-Channel IGBT GT60M323
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60M323
Voltage Resonance Inverter Switching Application
Unit: mm • • • • • Enhancement mode type High speed : tf = 0.09 µs |
Toshiba |
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GT60M324 | Silicon N-Channel IGBT | Toshiba |
|
GT60M322 | Silicon N-Channel IGBT | Toshiba |
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GT60M323 | Silicon N-Channel IGBT | Toshiba |
www.DataSheet.in | 2017 | संपर्क |