GT60J322 डाटा शीट PDF( Datasheet )

डेटा पत्रक ( Datasheet PDF )

भाग संख्या	विवरण	मैन्युफैक्चरर्स	PDF
GT60J322	Silicon N-Channel IGBT GT60J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J322 The 4th Generation Soft Switching Applications Unit: mm • • Enhancement-mode Low saturation voltage: VCE (sat) = 1.25 V	Toshiba Semiconductor	PDF
GT60J323	Silicon N-Channel IGBT	Toshiba Semiconductor	PDF
GT60J321	Silicon N-Channel IGBT	Toshiba	PDF
GT60J322	Silicon N-Channel IGBT	Toshiba Semiconductor	PDF
GT60J323H	Silicon N-Channel IGBT	Toshiba	PDF

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