डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
GT5G131 | Silicon N-Channel IGBT GT5G131
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT5G131
Strobe Flash Applications
Unit: mm • • • • • 3-V gate drive voltage: VGE = 3.0 V (min) (@IC = 130 A) Supplied in compa |
Toshiba Semiconductor |
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GT5G133 | Silicon N-Channel IGBT | Toshiba Semiconductor |
|
GT5G131 | Silicon N-Channel IGBT | Toshiba Semiconductor |
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GT5G134 | Silicon N-Channel IGBT | Toshiba |
www.DataSheet.in | 2017 | संपर्क |