डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
GT10G131 | Silicon N-Channel IGBT GT10G131
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT10G131
Strobe Flash Applications
Unit: mm
• 5th generation (trench gate structure) IGBT • Enhancement-mode • 4-V gate drive v |
Toshiba Semiconductor |
|
GT10G131 | Silicon N-Channel IGBT | Toshiba Semiconductor |
www.DataSheet.in | 2017 | संपर्क |