डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
GP200MHS18 | Half Bridge IGBT Module GP200MHS18
GP200MHS18
Half Bridge IGBT Module
DS5304-3.1 January 2001
FEATURES
s s s s
Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 200A Per Arm
KEY PARAMETERS VC |
Dynex Semiconductor |
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GP200MHS18 | Half Bridge IGBT Module | Dynex Semiconductor |
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GP200MHS12 | Half Bridge IGBT Module | Dynex Semiconductor |
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