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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FQP13N10 | 100V N-Channel MOSFET FQP13N10
January 2001
QFET
FQP13N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS |
Fairchild Semiconductor |
|
FQP13N10 | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
FQP13N10
·FEATURES ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) ≤180mΩ@VGS = 10V ·Fast Switching ·100% a |
INCHANGE |
|
FQP13N10L | N-Channel MOSFET FQP13N10L — N-Channel QFET® MOSFET
FQP13N10L
N-Channel QFET® MOSFET
100 V, 12.8 A, 180 mΩ
December 2013
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconducto |
Fairchild Semiconductor |
|
FQP13N10L | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
INCHAN |
INCHANGE |
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