डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FQB8N60C | 600V N-Channel MOSFET FQB8N60C / FQI8N60C
QFET
FQB8N60C / FQI8N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar strip |
Fairchild Semiconductor |
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FQB8N60C | N-Channel MOSFET FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET
FQB8N60C / FQI8N60C
N-Channel QFET® MOSFET
600 V, 7.5 A, 1.2 Ω
Description
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor� |
ON Semiconductor |
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FQB8N60CF | N-Channel MOSFET FQB8N60CF 600V N-Channel MOSFET
December 2005
FRFET
FQB8N60CF
600V N-Channel MOSFET
Features
• 6.26A, 600V, RDS(on) = 1.5 Ω @VGS = 10 V • Low gate charge ( typical 28nC) • Low Crss ( typical 12pF) � |
Fairchild Semiconductor |
www.DataSheet.in | 2017 | संपर्क |